| ThemajorobjectiveofthisvisitistoevaluateandcompareperformancesofseveralRamanmicrospectroscopyapparatusesbymeasuringtheintensityofasiliconRamanbandandtoobtainbetterideasabouthowtoimprovetheRamanmicroscopes.TheRamanmicroscopeswecomparedareourRamanmicroscope,theoneintheHamaguchigroupattheUniversityofTokyo,andNanofinder®30,whichisahigh-qualitycommercialRamanmicroscopeproducedbytheTokyoInstruments,Inc.Inallofourexperiments,thesiliconwaferwasexcitedbya5mWHe-Nelaser.AfternormalizingtheRamanspectrumwithsomecorrectionparameters,theRamanintensityofthesecond-orderbandoftheSi-Sistretchwas9000,6000,and3900countspersecondforthesystemsintheUniversityofTokyo,TokyoInstruments,andNCTU,respectively.Thisresultshowsthatweneedtoimproveoursystemtoachieveahigherperformanceofboththecollectionefficiencyandthesignal-to-noiseratio. |